Nanomagnetism & Oxides Laboratory
MAGNETIC FIELD SENSORS AND METHODS USING MIXING IN A MAGNETORESISTANCE ELEMENT

fillling date : 21/09/2016, number: WO/2017/058586; PCT/US2016/052745

Inventors : MONREAL GERARDO A, FRIEDRICH ANDREAS P, FERMON CLAUDE, PANNETIER-LECOEUR MYRIAM.

Abstract :A magnetic field sensor and an associated method use one or more magnetoresistance elements ( 1302, 1304, 1306, 1308) driven with an AC mixing current (1312, 1316) and experiencing an AC mixing magnetic field which have AC components of the same frequency (fmod), such as to generate a DC voltage signal (1334a, 1334b) or a DC voltage signal component related to a slope of a transfer curve of the one or more magnetoresistance elements, wherein the mixing takes place in the magnetoresistance element(s) and results in changes of the value of the DC component in response to changes of the sensed external magnetic field.

SYSTEME DE SPECTROSCOPIE RMN

fillling date : 01/03/2016, number: FR3048512A1

Inventors : GUITARD PIERRE-ANDRÉ ; FERMON CLAUDE ; PANNETIER LECOEUR MYRIAM ; JASMIN LEBRAS GUENAËLLE.

Abstract :L'invention a pour objet un système (100) de spectroscopie RMN pour l'étude d'au moins une région (202) d'un échantillon (102) à analyser comprenant : • un transducteur (101) magnetorésistif à couches planaires superposées recevant un signal de réponse dudit échantillon ; • des moyens adaptés pour faire circuler à travers ledit transducteur (101) un courant alternatif à une fréquence d'alimentation fc ; • des moyens de génération d'un champ magnétique H0 constant et uniforme dans toute une zone d'intérêt où sont placés l'échantillon (102) et le transducteur (101) ; • une bobine d'excitation (103) configurée pour générer un champ magnétique H1 uniforme dans toute la zone d'intérêt variable à une fréquence de résonance f1 ; Le champ H0 est sensiblement perpendiculaire aux couches du transducteur (101). Le système comporte en outre des moyens de réglage pour assurer l'orthogonalité entre le champ H0 et les couches planaires et des moyens de détection d'un signal à fréquence fc - f1, f1 - fc ou fc + f1.

SPIN VALVE MAGNETORESISTANCE ELEMENT WITH IMPROVED RESPONSE TO MAGNETIC FIELDS

fillling date : 05/06/2015, number: WO/2016/196157;PCT/US2016/034237

Inventors : FERMON Claude; CAMPIGLIO Paolo; CADUGAN, Bryan; .

Abstract :A spin valve magnetoresistance element has an even number of free layer structures having ferromagnetic or antiferromagentic coupling with respecto to associated pinning layers via non-magnetic spacers. It may have a configuration in which one half of the free layer structures has an antiferromagnetic coupling and the other half has a ferromagnetic coupling with respect to associated pinned layers. The different couplings are the result of an even number different spacer layers having respective different thicknesses.

DEVICE AND METHOD FOR PROSTHETIC REHABILITATION OF THE RETINA

fillling date : 28/01/2015, number: WO/2016/120557; PCT/FR2016/050156

Inventors : PANNETIER-LECOEUR MYRIAM, CARUSO LAURE, CHAVANE Frédéric, ROUX Sébastien, TRAUCHESSEC VINCENT, MATONTI Frédéric.

Abstract :One aspect of the invention relates to a device (10) for prosthetic sight rehabilitation, which includes: a scleral explant (11) with a shape that is suitable for being in contact with at least one portion of the sclera of an eye; and at least one inducer (12) arranged on the scleral explant (11).

MAGNETORESISTANCE ELEMENT WITH AN IMPROVED SEED LAYER TO PROMOTE AN IMPROVED RESPONSE TO MAGNETIC FIELDS

fillling date : 07/01/2015, number: WO/2015/105836 ;PCT/US2015/010424

Inventors : DRESSLER, Cyril; FERMON, Claude ; PANNETIER-LECOEUR, Myriam; CYRILLE, Marie-Claire; CAMPIGLIO, Paolo; .

Abstract :A magnetoresistance element and a method of fabricating same, the element comprising a substrate, a seed layer structure and a free layer structure, the former including at least a ferromagnetic seed layer promoting an increased magnetic anisotropy of the layers of the magnetoresistance element which are deposited above said seed layer structure.

MAGNETORESISTANCE ELEMENT WITH IMPROVED RESPONSE TO MAGNETIC FIELDS

fillling date : 07/01/2015, number: WO/2015/105834; PCT/US2015/010422

Inventors : CAMPIGLIO, Paolo; CADUGAN, Bryan; FERMON, Claude; LASSALLE-BALIER, Rémy; .

Abstract :A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

MAGNETORESISTANCE ELEMENT WITH IMPROVED RESPONSE TO MAGNETIC FIELDS

fillling date : 09/01/2014, number: WO/2015/105830; PCT/US2015/010417

Inventors : FERMON, Claude; PANNETIER-LECOEUR, Myriam; CYRILLE, Marie-Claire ; DRESSLER, Cyril; CAMPIGLIO, Paolo; .

Abstract :A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

MAGNETORESISTOR INTEGRATED SENSOR FOR MEASURING VOLTAGE OR CURRENT, AND DIAGNOSTIC SYSTEM

fillling date : 28/07/2011, number: WO/2012/013906 ; PCT/FR2011/051825

Inventors : PANNETIER-LECOEUR, Myriam; FERMON, Claude; GIRAUD, Alain; ROY, Francis.

Abstract :The invention relates to an integrated sensor, including terminals (1, 2) for connection to an electric generator, said terminals being connected to a metal measuring line (4, 5) in which a current proportional to the voltage or current of the generator to be measured flows, and magnetoresistors (31, 32, 33, 34). The metal measuring line includes elongate and parallel sections (4, 5) in which the current flows in opposite directions, said sections being connected to a portion (3) for closing the metal measuring line (3, 4, 5), which is arranged on a galvanic isolation layer (8) that is in turn arranged on an integrated circuit portion including the magnetoresistors (31, 32, 33, 34), each of which have a sensitive portion that is vertically adjacent to one of the elongate sections (4, 5). The sensor can be integrated into a diagnostic system.

Diagnostic system for measuring current/voltage of electric generator in e.g. hybrid vehicle, has hybrid measurement module connected to separate digital processing module, and amplifiers receiving signals of giant magnetoresistive sensors

fillling date : 30/07/2010, number: FR2963435A1;US20050110464A1

Inventors : GIRAUD ALAIN ; FERMON CLAUDE ; PANNETIER LECOEUR MYRIAM ; ROY FRANCIS.

Abstract :The system has a hybrid measurement module with giant magnetoresistive current/voltage sensors (111-118) integrated on a same strip (100), and connected to a separate digital processing module (400). The measurement module has a printed circuit with an amplifying module (200) whose set of amplifiers (201-208) receives signals delivered by the sensors, and another printed circuit with a multiplexing module (300). The circuits are assembled with input-output connection terminals connected to signal exchange tracks formed on sections of the circuits and connected to connection devices (401, 402).

METHOD FOR LOW FREQUENCY NOISE CANCELLATION IN MAGNETO-RESISTIVE MIXED SENSORS

fillling date : 27/06/2007, number: EP07825331B1

Inventors : FERMON CLAUDE ; POLOVY HEDWIGE ; PANNETIER-LECOEUR MYRIAM.

Abstract :The method for cancellation of low frequency noise in a magneto-resistive mixed sensor (1) comprising at least a superconducting loop with at least one constriction and at least one magneto-resistive element (6) comprises a set of measuring steps with at least one measuring step being conducted with the normal running of the mixed sensor and at least another measuring step being conducted whilst an additional super-current is temporarily injected in the at least one constriction of the at least one superconducting loop of the mixed sensor (1) up to a critical super-current of the constriction so that the result of the at least another measuring step is used as a reference level of the at least one magneto-resistive element (6).

DEVICE BASED ON A MAGNETO-RESISTIVE MIXED SENSOR WITHOUT LOW FREQUENCY NOISE AND ASSOCIATED METHOD

fillling date : 27/06/2007, number: EP07874008B1

Inventors : PANNETIER-LECOEUR MYRIAM ; POLOVY HEDWIGE ; FERMON CLAUDE.

Abstract :A device comprises a mixed sensor design with at least one superconducting loop (1) containing at least one constriction (3) and a magneto-resistive element (2) located next to the constriction (3). The device contains at least one heating element (5) that allows switching at sufficiently high frequency of at least one part of the superconducting loop (1) above its critical temperature, such that the super-current flowing through the at least one constriction (3) containing the at least one magneto-resistive element (2) is temporarily suppressed.

METHOD AND SYSTEM FOR ADJUSTING THE SENSITIVITY OF A MAGNETORESISTIVE SENSOR

fillling date : 22/06/2006, number: EP07803924B1

Inventors : FERMON CLAUDE ; PANNETIER-LECOEUR MYRIAM ; .

Abstract :The system for measuring high currents or magnetic fields using at least one magnetoresistive sensor (80) comprises a device for applying a known predetermined magnetic bias field Hbias along a direction such that it has a non-zero component of the field perpendicular to a detection direction of the magnetoresistive sensor (80) that also corresponds to a direction of anisotropy of a layer of the magnetoresistive sensor, a device for measuring the variation in resistance of the magnetoresistive sensor (80) and a unit for determining the external magnetic field H to be measured as a result of the measured resistance variation, the resistance of the sensor being subjected to a monotonic variation function.

SYSTEM AND METHOD FOR MEASURING A MAGNETIC RESONANCE SIGNAL BY MEANS OF A HYBRID-SENSOR CONTAINING A SUPERCONDUCTOR AND A MAGNETORESISTIVE ELEMENT

fillling date : 22/06/2006, number: WO 2007/148029A1;PCT/FR2007/051502

Inventors : FERMON CLAUDE ; JACQUINOT JACQUES ; PANNETIER-LECOEUR MYRIAM ; SCOLA JOSEPH.

Abstract :The system for measuring a magnetic resonance signal within a sample (4) placed in a static exterior magnetic field (H), comprises an excitation device (1 to 3, 6 to 10) for applying radio frequency pulses of strong intensity at a predetermined emission frequency fe in a measurement zone containing the sample (4). The excitation device comprises an excitation coil (3) aligned with the predetermined emission frequency fe and disposed in the vicinity of the sample (4) in such a way as to emit an electromagnetic field essentially perpendicular to the static exterior magnetic field (H). The system furthermore comprises at least one supraconducting-magnetoresistive hybrid sensor (5) comprising a supraconducting loop furnished with a constriction able to significantly increase the density of the current and at least one magnetoresistive sensor placed in immediate proximity to the constriction, while being separated from the latter by an insulating deposition.

METHOD AND DEVICE FOR NON DESTRUCTIVE EVALUATION OF DEFECTS IN A METALLIC OBJECT

fillling date : 24/02/2006, number: WO2007/095971A1; PCT/EP2006/002599

Inventors : FERMON CLAUDE ; PANNETIER MYRIAM ; BIZIERE NICOLAS ; VACHER FRANCOIS ; SOLLIER THIERRY.

Abstract :A device for non destructive evaluation of defects in a metallic object (2) by eddy currents, comprises a field emitter (3) for emitting an alternating electromagnetic field at a first frequency fi in the neighbourhood of the metallic object (2), and a magnetoresistive sensor (1) for detecting a response signal constituted by a return electromagnetic field which is re-emitted by eddy currents induced by the alternating electromagnetic field in the metallic object (2). The device further comprises: a driving circuit (230) for driving the magnetoresistive sensor (1) by a current at a second frequency fc which is different from the first frequency fi, so that the magnetoresistive sensor (1) acts as an in situ modulator; a detector for detecting a response signal between the terminals of the magnetoresistive sensor (1); a filter for filtering the response signal detected by the magnetoresistive sensor (1) to keep either the frequency sum (fi+fc) of the first and second frequencies or the frequency difference (fi-fc) of the first and second frequencies, and a processor for processing the filtered response signal and extract eddy current information on defects in the metallic object (2).

PROCEDE ET DISPOSITIF DE MESURE DE CHAMP MAGNETIQUE A L'AIDE D'UN CAPTEUR MAGNETORESITIF

fillling date : 18/10/2004, number: FR2876800A1

Inventors : BIZIERE NICOLAS ; FERMON CLAUDE ; PANNETIER MYRIAM.

Abstract :Le dispositif de mesure de champ magnétique à l'aide d'un capteur magnétorésistif comprend au moins un capteur magnétorésistif (5 ), un module (50) de mesure de la résistance électrique du capteur magnétorésistif (5), un module (40, 6 ) de génération d'un champ magnétique additionnel dans l'espace contenant le capteur magnétorésistif (5) et une unité de commande (60) d'une part pour commander sélectivement, par le module de génération (40, 6), l'application d'un champ magnétique additionnel impulsionnel présentant une première valeur ayant une première polarité positive ou négative et une intensité suffisante pour saturer le capteur magnétorésistif (5) et d'autre part pour commander sélectivement la mesure de la valeur de la résistance du capteur magnétorésistif (5) par le module (50) de mesure de résistance électrique.

An active protection device for protecting a circuit against mechanical and electromagnetic attack

fillling date : 16/07/2004, number: EP04291834A1

Inventors : BONVALOT BEATRICE ; FERMON CLAUDE ; PANNETIER MYRIAM.

Abstract :For protecting a circuit 1 against a mechanical or electromagnetic attack, an active protection device attached to the circuit comprises: at least one generator 13, 14 for generating a magnetic field, at least one magnetic sensor S1, S2, S3, S4 for measuring a value of the magnetic field, an integrity circuit connected to the at least one magnetic sensor S1, S2, S3, S4 and to the circuit 1. The integrity circuit activates a reaction procedure in the circuit if the measured value of the magnetic field made by the magnetic sensor is out of a values domain, the values domain being correlated to the generated magnetic field.

A SCREENED ELECTRICAL DEVICE AND A PROCESS FOR MANUFACTURING THE SAME

fillling date : 03/05/2004, number: WO/2005/106953; PCT/EP2005/004636

Inventors : PANNETIER MYRIAM ; FERMON CLAUDE ; BONVALOT BEATRICE.

Abstract :A protected electrical device having at least one electrical sub-assembly (1) to be protected comprises on at least one (11) of upper and lower surfaces (11, 12), at least a screening layer (2) against the electromagnetic (EM) and radiofrequency (RF) fields emitted by the electrical sub-assembly (1). The screening layer (2) comprises at least a first layer made of soft magnetic material with a high relative permeability (µr) larger than 500. The screening layer (2) is placed on substantially the whole surface of said at least one (11) of the upper and lower surfaces (11, 12), except on predetermined regions (1a) of limited area, the electrical connections (8, 9) with external devices being located on at least some of the predetermined regions of limited area.

MAGNETOSTATIC WAVE DEVICE BASED ON THIN METAL FILMS, METHOD FOR MAKING SAME AND APPLICATION TO DEVICES FOR PROCESSING MICROWAVE SIGNALS

fillling date : 27/10/2003, number: WO2004/040756A2; PCT/FR2003/003180

Inventors : BAILLEUL MATHIEU ; FERMON CLAUDE.

Abstract :The invention concerns an integrated magnetostatic wave device comprising a substrate (1), a conductive ferromagnetic thin film (2) arranged on the substrate (1), a first transducer antenna (10) for receiving microwave electric signals, arranged parallel to said ferromagnetic thin film (2) proximate thereto to generate in said material, through inductive coupling, magnetostatic waves or spin waves, and a second transducer antenna (20) for transmitting microwave electric signals, arranged parallel to said ferromagnetic thin film (2) proximate thereto to be inductively coupled and deliver microwave electric signals when a magnetostatic wave reaches the ferromagnetic thin film (2) said second antenna (10) being located on the same side of the ferromagnetic thin film (2) as the first antenna (10) substantially coplanar thereto.

DEVICE FOR SENSING RF FIELD

fillling date : 31/01/2003, number: EP04291834A1

Inventors : PANNETIER MYRIAM ; FERMON CLAUDE.

Abstract :The device for sensing a RF field comprises a flux−receiving loop (1) including a circumferential path having a defined path width (d), the flux−receiving loop (1) having a portion (10) that transforms the magnetic flux flowing through the flux receiving loop (1) into a high magnetic field. The portion (10) comprises a constriction of the flux−receiving loop (1) that concentrates the current lines in the circumferential path to define a current−field transformer. At least one very low noise magnetic field transducer (12) is located at a very close distance from the constriction.

DEVICE FOR SENSING A MAGNETIC FIELD

fillling date : 31/01/2003, number: W2004/068158A1;PCT/EP2003/001518

Inventors : PANNETIER MYRIAM ; FERMON CLAUDE ; SIMOLA JUHA.

Abstract :The device for sensing a magnetic field comprises a closed superconducting pick-up loop (1) having a path width (d) etched out of a single layer superconducting thin film and provided with a constriction (15) having a width (w) of narrow dimension smaller than the path width (d). The closed superconducting pick-up loop (1) constitutes a flux-to-field transformer (FFDT). At least one magnetoresistive element (2) is placed on top of or below the superconducting thin film, is isolated from the superconducting thin film by a thin insulating layer and is located so that an active part of the magnetoresistive element (2) is at the location of the constriction (15) and has a width equal to or less than the width of the constriction (15). The active part of the magnetoresistive element (2) is oriented so that the bias current in this active part is directed essentially along the constriction (15), orthogonally to the width of narrow dimension.